Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2005-11-01
2005-11-01
Siek, Vuthe (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C430S005000, C430S030000
Reexamination Certificate
active
06961920
ABSTRACT:
An optical proximity correction method is provided using a modified merit function based upon yield. Known failure mechanisms related to layout geometries are used to derive yield functions based upon distance values between layout features, such as, edge features. In comparing the edge points on the predicted layout pattern with the corresponding point on the design layout pattern, a yield test is first undertaken before movement of the points on the predicted layout pattern to a position of higher yield. Where yield is acceptable, no further movement is made. Where incremental movement of points results in coming within acceptable proximity before acceptable yield is reached, the point is flagged for further consideration.
REFERENCES:
patent: 5723233 (1998-03-01), Garza et al.
patent: 5994009 (1999-11-01), Tzu et al.
patent: 6077310 (2000-06-01), Yamamoto et al.
patent: 6194104 (2001-02-01), Hsu
patent: 6425112 (2002-07-01), Bula et al.
patent: 6470489 (2002-10-01), Chang et al.
patent: 6539521 (2003-03-01), Pierrat et al.
patent: 6553559 (2003-04-01), Liebmann et al.
patent: 6562638 (2003-05-01), Balasinski et al.
patent: 6578190 (2003-06-01), Ferguson et al.
patent: 6665856 (2003-12-01), Pierrat et al.
patent: 6792590 (2004-09-01), Pierrat et al.
patent: 6813572 (2004-11-01), Satya et al.
patent: 2002/0100004 (2002-07-01), Pierrat et al.
patent: 2003/0046654 (2003-03-01), Bodendorf et al.
patent: 2003/0139833 (2003-07-01), Pierrat et al.
patent: 2004/0128630 (2004-07-01), Ward et al.
patent: 2004/0153979 (2004-08-01), Chang
International Business Machines - Corporation
Jordan John A.
Siek Vuthe
Steinberg William H.
LandOfFree
Method for interlayer and yield based optical proximity... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for interlayer and yield based optical proximity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for interlayer and yield based optical proximity... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3503395