Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-08-23
2005-08-23
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S279000
Reexamination Certificate
active
06933199
ABSTRACT:
A method for integrating non-volatile memory with high-voltage and low-voltage logic in a salicide process is disclosed. The method includes forming a source region and a drain region associated with a gate region for each of a low-voltage (LV) device, a high-voltage (HV) device and a non-volatile memory (NVM) device. The HV, LV and NVM devices are electrically isolated by a field oxide region located adjacent to the respective source and drain regions. The field oxide regions are implanted with an isolation implant, such that the field implant is spaced a predetermined distance away from the HV and NVM source and drain regions. A blanking layer is deposited on the field oxide regions and a portion of the source and drain regions associated with the HV and NVM devices. Doped metal salicide regions are formed on the LV source and drain regions, all gate regions, and the exposed portions of the HV and NVM source and drain regions not covered by the blanking layer.
REFERENCES:
patent: 5879990 (1999-03-01), Dormans et al.
patent: 5956584 (1999-09-01), Wu
patent: 6251728 (2001-06-01), Patelmo et al.
patent: 0 811 983 (1997-10-01), None
Wong, Jack and Daryanani, Sonu,Method of Forming High Voltage CMOS Transistors Using a Modified SADS Process, Microchip Technology, Inc., Tempe, AZ.
Daryanani Sonu
Wong Jack
Microchip Technology Incorporated
Pham Long
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