Method for integrating DMOS into sub-micron CMOS process

Details Method for integrating DMOS into sub-micron CMOS process Method for integrating DMOS into sub-micron CMOS process

2006-03-13

2009-06-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S262000, C438S268000, C257SE21418, C257SE21632, C257SE21645, C257SE27067, C257SE27081, C257SE29040, C257SE29258

Reexamination Certificate

active

07544558

ABSTRACT:
This invention is forming the DMOS channel after CMOS active layer before gate poly layer to make the modular DMOS process step easily adding into the sub-micron CMOS or BiCMOS process. And DMOS source is formed by implant which is separated by a spacer self-aligned to the window for DMOS body. By this method, the performance of CMOS and bipolar devices formed original CMOS or BiCMOS process keeps no change. The product design kit, such as standard cell library of CMOS and BiCMOS, can be used continuously with no change.

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