Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-09-20
2005-09-20
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S288000, C438S591000, C438S761000, C438S763000, C438S954000, C438S981000
Reexamination Certificate
active
06946349
ABSTRACT:
A method for integrating a SONOS device with an improved top oxide with SiO2gate oxides of different thickness is described. In a first embodiment during ISSG oxidation to form the SiO2gate oxides, a thin sacrificial silicon nitride layer is used over the top oxide of the ONO to minimize loss and to control the top oxide thickness. In a second embodiment the top oxide layer for the SONOS device is formed by depositing an NO stack. During ISSG oxidation to form the SiO2gate oxides a portion of the Si3N4in the NO stack is converted to SiO2to form the top oxide with improved thickness control.
REFERENCES:
patent: 6362059 (2002-03-01), Fukasaku et al.
patent: 6531350 (2003-03-01), Satoh et al.
patent: 6555436 (2003-04-01), Ramsbey et al.
patent: 6677200 (2004-01-01), Lee et al.
patent: 6787421 (2004-09-01), Gilmer et al.
patent: 2003/0032242 (2003-02-01), Lee et al.
patent: 2003/0155582 (2003-08-01), Mahajani et al.
patent: 2004/0018685 (2004-01-01), Shibata
patent: 2004/0021171 (2004-02-01), Nishizaka
patent: 2004/0110390 (2004-06-01), Takagi et al.
patent: 2004/0137686 (2004-07-01), Chen et al.
patent: 2004/0157393 (2004-08-01), Hwang
Koh Hwa Weng
Lee Jae Gon
Quek Elgin
Sohn Dong Kyun
Ackerman Stephen B.
Chartered Semiconductor Manufacturing Ltd.
Estrada Michelle
Fourson George
Pike Rosemary L. S.
LandOfFree
Method for integrating a SONOS gate oxide transistor into a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for integrating a SONOS gate oxide transistor into a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for integrating a SONOS gate oxide transistor into a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3447911