Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-02-14
2006-02-14
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S695000
Reexamination Certificate
active
06998304
ABSTRACT:
A method for integrated processing of a high Voltage MOSFET device and a split gate MOSFET device whereby a novel method is provided to form the split gate device and the high voltage MOSFET device in parallel processing steps including an oxide formation step whereby an oxide spacer layer in a split gate device is formed using about the same overall thermal budget while forming in parallel a thick gate oxide for a an embedded high voltage MOSFET device.
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Ho David
Tzeng Jiann-Tyng
Wu Haw-Chuan
Lee Calvin
Nelms David
Taiwan Semiconductor Manufacturing Co. Ltd.
Tung R. W.
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