Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-12-01
2008-11-04
Luu, Chuong A. (Department: 2892)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S775000, C438S758000, C438S648000
Reexamination Certificate
active
07446056
ABSTRACT:
The present invention relates to a method for increasing the grain size of a polysilicon layer, which includes exposing a silicon oxide wafer in a deposition chamber to an amount, effective for the purpose, of nitrogen at a flow rate of at least about 240 standard liters per minute (slm). The instant invention further relates to a method for inhibiting the formation of a polysilicon seed in a furnace, which includes the treatment as noted above. The invention also relates to a method for forming a polysilicon layer, including: forming a silicon oxide layer on a substrate, the silicon oxide layer having a plurality of oxygen molecules therein; exposing the silicon oxide layer to a predetermined amount of nitrogen-containing gas in a furnace, whereby a plurality of nitrogen molecules in the nitrogen-containing gas replaces at least part of the oxygen molecules in the silicon oxide layer; and forming a polysilicon layer on the silicon oxide layer.
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Huang David
Huang Yao-Hui
Lee Tung-Li
Lin Chih-Hao
Lin Yen-Fei
Duane Morris LLP
Luu Chuong A.
Taiwan Semiconductor Manufacturing Co. Ltd.
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