Method for increasing etch removal rate of silicon oxynitride

Details Method for increasing etch removal rate of silicon oxynitride Method for increasing etch removal rate of silicon oxynitride

1997-12-17

1999-12-21

Beck, Shrive

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427578, H05H 124

Patent

active

060046325

ABSTRACT:
A method for depositing a silicon oxynitride layer that has a higher etch-removal rate. The deposition starts by first passing gas from a pipeline A into the deposition chamber before switching the RF power source on. The further is the delay in switching the RF power source on, the higher will be the etch-removal rate of the silicon oxynitride layer formed by the deposition. Furthermore, the RF power source will remain on for a short period after the pump starts pumping gas away from the deposition chamber through pipeline A at the end of the deposition. The sooner is the switching off of the RB power source after the pump start to operate, the higher will be the etch-removal rate of the silicon oxynitride layer that result from the deposition.

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