Optics: measuring and testing – By light interference – For dimensional measurement
Reexamination Certificate
2006-03-28
2006-03-28
Toatley, Jr., Gregory J. (Department: 2877)
Optics: measuring and testing
By light interference
For dimensional measurement
Reexamination Certificate
active
07019844
ABSTRACT:
A method of determining a parameter of interest during fabrication of a patterned substrate includes illuminating at least a portion of the patterned substrate with a normal incident light beam, obtaining a measured net reflectance spectrum of the portion of the patterned substrate from a normal reflected light beam, calculating a modeled net reflectance spectrum of the portion of the patterned substrate, and determining a set of parameters that provides a close match between the measured net reflectance spectrum and the modeled net reflectance spectrum. The modeled net reflectance spectrum is calculated as a weighted incoherent sum of reflectances from n≧1 different regions constituting the portion of the patterned substrate, wherein the reflectance of each of the n different regions is a weighted coherent sum of reflected fields from k≧1 laterally-distinct areas constituting the region.
REFERENCES:
patent: 4147435 (1979-04-01), Habegger
patent: 5900633 (1999-05-01), Solomon et al.
patent: 5936734 (1999-08-01), Johs et al.
patent: 5980768 (1999-11-01), Abraham
patent: 6111634 (2000-08-01), Pecen et al.
patent: 6136712 (2000-10-01), Klippert et al.
patent: 6160621 (2000-12-01), Perry et al.
patent: 6271047 (2001-08-01), Ushio et al.
patent: 6275297 (2001-08-01), Zalicki
patent: 6410451 (2002-06-01), Nguyen et al.
patent: 6413867 (2002-07-01), Sarfaty et al.
patent: 6567213 (2003-05-01), Rosencwaig et al.
patent: 6589869 (2003-07-01), Sarfaty et al.
patent: 6608681 (2003-08-01), Tanaka et al.
patent: 6673637 (2004-01-01), Wack et al.
patent: 2004/0087041 (2004-05-01), Perry et al.
patent: 1111356 (2001-06-01), None
patent: 2000292129 (2000-10-01), None
patent: 0290743 (2002-07-01), None
PCT International Search Report, EPO, PCT/US03/25147.
Hicks et al., “Reflectance Modeling for In Situ Dry Etch Monitoring of Bulk SiO2and III-V multilayer structures” (Nov. 1994) Jrnl of Vac. Sc. & Tech. pp. 3306-3310.
Bosch-Charpenay et al., “Real-Time Etch-Dept Measurements of MEMS Devices” (Apr. 2002) Jrnl of MicroElect. Sys., IEEE, NY, pp. 113-117.
Benson et al., “In-situ Spectroscopic Reflectometry for Polycrystalline Silicon Thin Film Etch Rate Determination during Reactive Ion Etching”, (Jun. 1996) Jrnl of Elect. Mat., pp. 955-964.
Anon., “Zero-Order reflecting Reference Optics”, (Jan. 1990) IBM Tech. Discl. Bulletin, pp. 381-383.
PCT International Search Report, PCT/US03/25146, dated Feb. 20, 2004.
P.A. Heimann and R.J. Schutz, “Optical etch-rate monitoring: computer simulation of reflectance,” J. Electrochem. Soc. 131, pp. 881-885 (1984).
P.A. Heinmann, “Optical etch-rate monitoring using active device areas: lateral interference effects,” J. Electrochem. Soc. 132, pp. 2003-2006 (1985).
H.L. Maynard, N. Layadi, and J.T.-C. Lee, “Multiwavelength ellipsometry for real-time process control of the plasma etching of patterned samples,” J. Vac. Sci. Technol. B 15, pp. 109-115 (1997).
W. Kong, H.-T. Huang, and F. L. Terry, Jr., “A hybrid analysis of ellipsometry data from patterned structures,” Proceedings of NIST 2000, AIP Conference Proceedings, v. 550, pp. 373-377 (2001).
P. Lalanne and D.L. Lalanne, “On the effective medium theory of subwavelenght periodic structures,” J. Mod. Opt. (1996).
V. C. Venugopal, A. Lakhtakia, R. Messier, and J.-P. Kucera, “Low permittivity nonocomposite materials using sculptured thin film technology,” J. Vac. Sci. Technol. A 18, pp. 32-36 (2000).
G. Bouchitte and R. Petit, “Homogenization techniques as applied in the electromagnetic theory of gratings,” Electromagnetics 5, pp. 17-36 (1985).
Z. R. Hatab, J.R. McNeil, and S. S. H. Naqvi, “Sixteen-megabit dynamic random access memeory trench depth characterization using two-dimensional diffraction analysis,” J. Vac. Sci. Technol. B 13, pp. 174-182 (1995).
H. Kikuta, Y. Ohira, H. Kubo, and K. Iwata, “Effective medium theory of two-dimensional subwavelength gratings in the non-quasi-static limit,” J. Opt. Soc. of A., vol. 15, No. 6, pp. 1577-1585 (Jun. 1998).
J.P. Merceron, V.C. Venugopal, A.J. Perry, and A.J. Miller, “Endpoint Strategies for Recess Processes in DRAM and eDRAM Applications,” Abstract 1253, AVS 49thInternational Symposium (Nov. 2002).
S. Zaidi, G. Stojakovic, A. Gutmann, C. Bozdog, U. Mantz, S. B. Charpenay, and P. Rosenthal, “FTIR-based non-destructive method for metrology of depths in poly silicon filled trenches,”Metrology, Inspection, and Process Control for Microlithography XVII, Daniel J. Herr (ed.), Proceedings of SPIE, vol. 5038, pp. 185-190 (2003).
C. G. Galarza, P. P. Khargonekar, F. L. Terry, Jr., “Real-time estimation of patterned wafer parameters using in-situ spectroscopic ellipsometry,” Proceedings of the 1999 IEEE, International Conference on Control Applications, Hawaii, pp. 773-778 (Aug. 1999).
J. Merceron, “Robust endpoint strategies for recess processes,” Ecole Polytechnique Promotion X99, pp. 1-28 (2002).
B. Michel, “Recent developments in the homogenization of linear bianisotropic composite materials,”Electromagnetic Fields in Unconventional Materials and Structures(Chapter 2), Singh and Lakhtakia (ed.), John Wiley and Sons, Inc., pp. 39-83 (2000).
P.-Y. Guittet, U. Mantz, P. Weidner, J.-L. Stehle, S. Bourtault, and D. Zahorski, “Infrared Spectroscopic ellipsometry in semiconductor manufacturing,”Metrology, Inspection, and Process Control for Microlithography XVIII, R. M. Silver (ed.), Proceedings of SPIE, vol. 5375, pp. 771-778 (May 2004).
A. Dag, V. M. Rubinstein, Y. Gilboa, S. Hedayati, “Performing STI process control using large-spot-size fourier-transform reflectometry,” micromagazine.com, pp. 25-30 (Apr. 2003).
C. F. Bohren and D. R. Huffman,Absorption and Scattering of Light by Small ParticlesWiley Science Paperback Series, John Wiley and Sons, Inc., pp. 212-219 (1983).
A. Lakhtakia (ed.),Selected Papers on Linear Optical Composite Materials, Milestone vol. 120, Bellingham, WA: SPIE Optical Engineering Press (1996).
J.N. Mait and D. W. Prather (eds.),Selected Papers on Subwavelength Diffractive Optics, Milestone vol. 166, Bellingham, WA: SPIE Optical Engineering Press (2001).
U.S. Appl. No. 10/401,118, filed Mar. 27, 2003, “Process Endpoint Detection Method Using Broadband Reflectometry”.
U.S. Appl. No. 10/286,409, filed Nov. 1, 2002, “Method for controlling a recess etch process”.
Perry Andrew J.
Venugopal Vijayakumar C.
IP Strategy Group PC
Lam Research Corporation
Lyons Michael A.
Toatley , Jr. Gregory J.
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