Method for in-situ cleaning of native oxide from silicon surface

Details Method for in-situ cleaning of native oxide from silicon surface Method for in-situ cleaning of native oxide from silicon surface

1995-04-26

1999-05-04

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438791, 438906, H01L 21318

Patent

active

058997520

ABSTRACT:
A method of in-situ cleaning a native oxide layer from the surface of a silicon wafer positioned in a vacuum chamber that is substantially free of oxidizing species by passing at least one non-oxidizing gas over the native oxide layer at a wafer cleaning temperature between about 650.degree. C. to about 1025.degree. C. for a sufficient length of time until such native oxide layer is removed.

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