Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-04-08
2008-04-08
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S301000, C438S305000, C257SE21644
Reexamination Certificate
active
07354833
ABSTRACT:
This invention provides a method for improving threshold voltage stability of at least one metal-oxide-semiconductor (MOS) device. In one embodiment of the invention, at least one well is formed on a semiconductor substrate. A gate dielectric layer is formed on the well of the semiconductor substrate. A gate conductive layer is formed on the gate dielectric layer. Ions are implanted into the well to from at least one first buried doped region beneath the gate dielectric layer, and one or more second buried doped regions beneath at least one location of the well that is earmarked for forming a lightly doped drain (LDD) region.
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patent: 5518941 (1996-05-01), Lin et al.
patent: 6187643 (2001-02-01), Borland
patent: 2002/0033511 (2002-03-01), Babcock et al.
patent: 2004/0014264 (2004-01-01), Oh
patent: 2004/0082133 (2004-04-01), Salling et al.
Kirkpatrick & Lockhart Preston Gates & Ellis LLP
Smoot Stephen W.
Taiwan Semiconductor Manufacturing Co. Ltd.
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