Method for improving the rate of a plasma enhanced vacuum treatm

Details Method for improving the rate of a plasma enhanced vacuum treatm Method for improving the rate of a plasma enhanced vacuum treatm

1994-05-03

1997-12-02

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156345, 1566431, 216 61, 118723MW, C23C 1650

Patent

active

056932383

ABSTRACT:
For increasing the rate with which a workpiece is treated in a plasma enhanced chemical vapor deposition method and thereby lowering for coating treatment exposure of the coating to ion impact, there is maintained a non-vanishing dust particle density along the surface to be treated with a predetermined density distribution along this surface. The density distribution may be controlled by appropriately applying a field of force substantially in parallelism to the surface to be treated and acting on the dust particles entrapped in the plasma discharge.

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"Reducing Dust-Induced Pinholes In Sputter Films"; E. Stern; IBM Tech. Disclosure; vol. 12, No. 1, Jun. 1969*, p. 149.

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