Method for improving silicon-on-insulator (SOI) film...

Details Method for improving silicon-on-insulator (SOI) film... Method for improving silicon-on-insulator (SOI) film...

2005-04-05

2005-04-05

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S981000, C257S347000

Reexamination Certificate

active

06875656

ABSTRACT:
A method for improving the thickness uniformity of a silicon-on-insulator (SOI) film on a semiconductor wafer. The preferred embodiments disclose using a selective epitaxial growth (SEG), sacrificial oxidation and an oxide removal process for improving SOI thickness uniformity. The SEG process is a leveling process that grows a materially identical layer of epitaxial silicon over the SOI layer, thus thickening the SOI layer and increasing its thickness uniformity. The sacrificial oxidation process oxidizes a portion of the newly thickened SOI layer, converting it into an oxide. An oxide removal process, commonly an etch process, removes the oxide produced by sacrificial oxidation while maintaining the thickness uniformity achieved by SEG leveling.

REFERENCES:
patent: 5679475 (1997-10-01), Yamagata et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6429488 (2002-08-01), Leobandung et al.
patent: 6500719 (2002-12-01), Hahn

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