Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-10-17
2010-06-29
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S788000, C438S792000
Reexamination Certificate
active
07745346
ABSTRACT:
A method for forming a silicon-based dielectric film on a substrate with a single deposition process operation using pulsed plasma enhanced chemical vapor deposition (PECVD) wherein the high frequency radio frequency power of the plasma is pulsed, allows enhanced control, efficiency and product quality of the PECVD process. Pulsing the high frequency RF power of the plasma reduces the deposited film thickness per unit time the high frequency RF power of the plasma is on. This yields silicon-based dielectric films that are both thin and conformal.
REFERENCES:
patent: 5231057 (1993-07-01), Doki et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 7381644 (2008-06-01), Subramonium et al.
patent: 2004/0018750 (2004-01-01), Sophie et al.
patent: 2004/0161941 (2004-08-01), Donohoe et al.
patent: 2004/0195659 (2004-10-01), Grill et al.
patent: 2008/0242116 (2008-10-01), Clark
Ikeda et al., “TOP-PECVD”: A New Conformal Plasma Enhanced CVD Technology using TEOS, Ozone and Pulse-modulated RF Plasma, IEEE (1992), pp. 289-292.
Antonelli Andrew
Hausmann Dennis
Schravendijk Bart Van
Sims James S.
Varadarajan Sesha
Novellus Systems Inc.
Picardat Kevin M
Weaver Austin Villeneuve & Sampson LLP
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