Method for improving nitrogen profile in plasma nitrided...

Details Method for improving nitrogen profile in plasma nitrided... Method for improving nitrogen profile in plasma nitrided...

2006-10-17

2006-10-17

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S513000, C438S660000, C438S775000, C438S798000, C438S913000

Reexamination Certificate

active

07122454

ABSTRACT:
A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system experience similar nitrogen content.

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patent: 2004/0142577 (2004-07-01), Sugawara et al.

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