Method for improving interlevel dielectric gap filling over...

Details Method for improving interlevel dielectric gap filling over... Method for improving interlevel dielectric gap filling over...

2006-10-10

2006-10-10

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S275000, C438S299000, C438S183000

Reexamination Certificate

active

07119017

ABSTRACT:
A novel sequence of process steps is provided for forming void-free interlevel dielectric layers between closely spaced gate electrodes. Closely spaced gate electrodes having sidewall spacers are formed on a substrate. After using the sidewall spacers to form self-aligned source/drain contacts and self-aligned silicide contacts, the sidewall spacers are removed. By removing the sidewall spacers, the aspect ratio of the gap between adjacent closely spaced gate electrodes is substantially reduced (from greater than 5 to less than 2), thereby preventing voids during the subsequent deposition of an ILD layer.

REFERENCES:
patent: 4994404 (1991-02-01), Sheng et al.
patent: 5491099 (1996-02-01), Hsu
patent: 5635417 (1997-06-01), Natsume
patent: 5751040 (1998-05-01), Chen et al.
patent: 6252277 (2001-06-01), Chan et al.
patent: 6291354 (2001-09-01), Hsiao et al.
patent: 6365943 (2002-04-01), Gardner et al.
patent: 6380535 (2002-04-01), Wetzel et al.
patent: 6455373 (2002-09-01), Pham et al.
patent: 6583012 (2003-06-01), Buynoski et al.
patent: 6849546 (2005-02-01), Tu et al.
patent: 2005/0035409 (2005-02-01), Ko et al.

Affiliated with

Also associated with

Rating

Method for improving interlevel dielectric gap filling over... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improving interlevel dielectric gap filling over..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improving interlevel dielectric gap filling over... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3671031