Method for improving hot carrier degradation

Details Method for improving hot carrier degradation Method for improving hot carrier degradation

1997-12-12

1999-07-06

Booth, Richard A.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438528, 438305, H01L 21336

Patent

active

059207825

ABSTRACT:
A method of improving hot carrier degradation comprises a silicon substrate on which an isolation oxide layer is formed to define an active region. The active region comprises a gate including a gate oxide layer. A thin oxide layer is formed over the gate, the isolation oxide layer, and the silicon substrate. With a tilt angle, a nitrogen ion is implanted into the interface between the gate and the silicon substrate at a corner. The gate oxide layer is thus nitridized. After a spacer around the gate is formed, a post heat annealing is performed. Using nitrogen ion implantation with a wide angle, the hot carrier degradation can be improved, and the reliability of gate oxide layer is enhanced.

REFERENCES:
patent: 4243435 (1981-01-01), Barile et al.
patent: 5750435 (1998-05-01), Pan

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