Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-03-05
2000-08-29
Chaudhuri, Olik
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438613, 438614, 438617, 438622, 438637, H01L 2144
Patent
active
061108162
ABSTRACT:
A method is adapted to form wire interconnect pads on integrated circuit devices and includes the steps of providing a semiconductor substrate having an aluminum-copper top metal layer, and a titanium nitride layer covering the aluminum-copper top metal layer, and a photoresist coating applied to the titanium nitride layer. The photoresist coating is partially exposed and partially developed to form openings for etching an array of submicron size holes. Etching through the titanium nitride layer to the aluminum-copper layer, by way of the partially developed photoresist, forms a rough textured surface profile in the array of cavities, with diameters of less than 0.3 um, etched in the aluminum copper layer. After stripping of the photoresist and depositing a passivation film, windows are formed delineating improved bond pads for wire bonding. The textured cavities increase the surface area of the bond pads and provide improved bondability for the 0.35 and 0.3 um IC devices.
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Hsieh Han-Chang
Hsieh Hung-Chang
Huang Yung-Sheng
Ackerman Stephen B.
Chambliss Alonzo
Chaudhuri Olik
Saile George O.
Taiwan Semiconductor Manufacturing Company
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