Method for improving a simulation model of photolithographic...

Details Method for improving a simulation model of photolithographic... Method for improving a simulation model of photolithographic...

2007-04-17

2007-04-17

Siek, Vuthe (Department: 2825)

Computer-aided design and analysis of circuits and semiconductor

Nanotechnology related integrated circuit design

C716S030000, C716S030000

Reexamination Certificate

active

10995126

ABSTRACT:
A method is provided for improving a photolithographic simulation model of the photolithographic simulation of a pattern formed on a photomask. Proceeding from a two-dimensional simulation model that takes account of the physical-chemical processes during lithography, a frequency-dependent intensity loss is calculated which is determined by multiplication of the simulated intensity distribution in the Fourier space by a filter function. An accurate calculation of the intensity distribution in the substrate plane is obtained. This method achieves the accuracy of three-dimensional models with a significantly shorter processing duration and is further suitable in particular for the calculation of OPC structures.

REFERENCES:
patent: 6049660 (2000-04-01), Ahn et al.
patent: 2002/0018599 (2002-02-01), Kamon
patent: 2003/0236653 (2003-12-01), Zinn

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