Method for improving a semiconductor device delamination...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S624000, C438S644000, C438S654000

Reexamination Certificate

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07456093

ABSTRACT:
A semiconductor device with improved resistance to delamination and method for forming the same the method including providing a semiconductor wafer comprising a metallization layer with an uppermost etch stop layer; forming at least one adhesion promoting layer on the etch stop layer; and, forming an inter-metal dielectric (IMD) layer on the at least one adhesion promoting layer.

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patent: 6417112 (2002-07-01), Peyne et al.
patent: 6620727 (2003-09-01), Brennan
patent: 7294565 (2007-11-01), Burrell et al.

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