Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-08-19
2000-08-29
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438584, 438597, 438687, H01L 214763
Patent
active
061108170
ABSTRACT:
A method for forming a carbon doped copper layer, preferably an electrochemically deposited carbon doped copper layer over a semiconductor structure, comprising the following steps. A semiconductor structure having an upper surface is provided. The semiconductor structure is placed in an electrochemical bath having a predetermined concentration of carbon. A first carbon doped copper layer is electrochemically deposited for a first period of time at a first current density. The first carbon doped copper layer blanket fills the semiconductor structure and has a predetermined thickness and a first concentration of carbon. A second carbon doped copper layer is electrochemically deposited over the first carbon doped copper layer for a second period of time at a second current density. The second carbon doped copper layer has a predetermined thickness and a second concentration of carbon. The carbon doped copper layer formed by the process of the present invention has improved electromigration without causing high resistivity.
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Shue Shau-Lin
Tsai Ming Wsing
Ackerman Stephen B.
Collins D. M.
Picardat Kevin M.
Saile Geoge O.
Stanton Stephen G.
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