Method for improved lithographic patterning utilizing...

Radiation imagery chemistry: process – composition – or product th – Including control feature responsive to a test or measurement

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S311000, C430S322000, C430S005000, C355S071000, C355S067000, C716S030000

Reexamination Certificate

active

06951701

ABSTRACT:
A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

REFERENCES:
patent: 5300786 (1994-04-01), Brunner et al.
patent: 5680588 (1997-10-01), Gortych et al.
patent: 5805290 (1998-09-01), Ausschnitt et al.
patent: 5965309 (1999-10-01), Ausschnitt et al.
patent: 6094305 (2000-07-01), Shiraishi
patent: 6525806 (2003-02-01), Smith
patent: 6563566 (2003-05-01), Rosenbluth et al.
patent: 6623895 (2003-09-01), Chen et al.
patent: 0 969 327 (2000-01-01), None
Alan E. Rosenbluth et al., “Optimum Mask and Source Patterns to Print a Given Shape” SPIE v.4346—Optical Microlithography XIV, p. 1-17.
B. P. Mathur et al., “Quantitative Evaluation of Shape of Image on Photoresist of Square Apertures,” IEEE Transactions on Electron Devices, vol. 35, No. 3, Mar. 1998.
R. A. Budd et al., A New Mask Evaluation Tool, the Microlithography Simulation Microscope Aerial Image Measurement System, SPIE—The International Society for Optical Engineering, Optical/Laser Microlithography VII, vol. 2197, Mar. 1994, p. 530-540.
E. Barouch, et al., “Illuminator optimization for projection printing”, SPIE Conference on Optical Microlighography XII, Mar. 1999, vol. 3679.
A. Grassmann et al., “Aerial Image Studies of an Advanced Deep-UV Exposure System”, Microelectronic Engineering 23 (1994) pp. 155-158.
Hye-Keun Oh et al., “Optimum combination of source, mask and filter for better lithograpic performance”, SPIE—The International Society for Optical Engineering, Optical/Laser Microlithography VIII, SPIE vol. 2440, p. 838-849 (1995).
Christopher J. Progler et al., “Merit functions for lithographic lens design”, J. Vac. Sci. Techno. B. 14(6), p. 3714-3718, Nov/Dec. 1996.
Nishrin Kachwala et al., “Imaging contrast improvement for 160 nm line features using sub resolution assist features with binary, 6% ternary atteunuated phase shift mask with process tuned resist”, SPIE Conference on Optical Microlithography XII, Mar. 1999, SPIE Vol. 3679, p. 55-67.
Schellenberg, F. et al. “Optimization of Real Phase Mask Performance”, Proceedings of the SPIE, SPIE Bellingham, VA vol. 1604, Sep. 25, 1991 pp. 274-296, XP008018616, ISSN: 0277-786X.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for improved lithographic patterning utilizing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for improved lithographic patterning utilizing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for improved lithographic patterning utilizing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3435316

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.