Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-12-06
2009-11-24
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S630000, C438S649000, C438S655000
Reexamination Certificate
active
07622386
ABSTRACT:
A method of forming silicide contacts for semiconductor devices includes subjecting a silicon containing semiconductor wafer to a degas treatment at an initial degas temperature of about 250 to about 400° C., transferring the semiconductor wafer from a degas chamber to a deposition chamber, depositing a nickel containing layer over the wafer following transfer of the wafer from the degas chamber to the deposition chamber, and annealing the semiconductor wafer so as to create silicide regions at portions on the wafer where nickel material is formed over silicon.
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Hon Wong Keith Kwong
Kwak Jun-Keun
Madan Anita
Purtell Robert J.
Cai Yuanmin
Cantor & Colburn LLP
International Business Machines - Corporation
Picardat Kevin M
Samsung Electronics Co,. Ltd.
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