Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-04-14
1998-04-07
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438643, 438648, H01L 21283
Patent
active
057364583
ABSTRACT:
A method for improving the electrical resistance of contacting surfaces in via holes in semiconductor substrates is disclosed. The via holes are formed and later filled with metal to interconnect metal layers in the substrate. The method involves the introduction of a post-treatment process in the filling of vias with metal. Specifically, the nitrogen treatment step followed by a vacuum break is introduced right after the deposition of a titanium layer over the exposed first upper metal layer when the via holes are first opened. The treatment is accomplished in situ, that is, without breaking vacuum, and at room temperature. The remaining steps of filling the vias follow the conventional methods. It is shown that the contact resistances are reduced and that a further reduction in the contact resistance is achieved if the nitrogen treatment is performed along with vacuum break.
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Ackerman Stephen B.
Quach T. N.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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