Method for implanting ions into semiconductor substrate

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region

Reexamination Certificate

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C438S514000

Reexamination Certificate

active

07060598

ABSTRACT:
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.

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