Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2006-06-13
2006-06-13
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S514000
Reexamination Certificate
active
07060598
ABSTRACT:
An ion implantation method for implanting ions into a side wall of a protruded semiconductor layer from a semiconductor substrate, the method includes applying an electric field to accelerate the ions in one direction and applying a magnetic field parallel to a plane extending at a predetermined angle with respect to the one direction, thereby controlling a direction of the ion implantation to the side wall.
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Horii Shinji
Masuoka Fujio
Tanigami Takuji
Yokoyama Takashi
Morrison & Foerster / LLP
Sharp Kabushiki Kaisha
Smith Bradley K.
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