Method for implanting ions in semiconductor device

Details Method for implanting ions in semiconductor device Method for implanting ions in semiconductor device

2004-12-30

2010-11-02

Nguyen, Khiem D (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C257SE21057, C257SE21473, C250S492200, C250S492210, C250S492230

Reexamination Certificate

active

07825015

ABSTRACT:
The present invention provides a method for implanting ions in a semiconductor device capable of compensating for a difference in threshold voltages between a central portion and edge portions of a substrate generated while performing uniform ion implantation to entire surfaces of a substrate and another method for fabricating a semiconductor device capable of improving distribution of transistor parameters inside a substrate by forming a nonuniform channel doping layer or by forming a nonuniform junction profile.

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