Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1996-12-31
1998-11-10
Graybill, David
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
423773, 423960, H01L 21336, H01L 2131
Patent
active
058343555
ABSTRACT:
According to one embodiment, the present invention provides a method for implanting halo structures into a transistor that is fabricated on a semiconductor substrate which consists of a silicon layer; a gate dielectric formed on the silicon layer; a polysilicon layer formed on the gate dielectric; and a silicon nitride layer formed over the polysilicon layer. The silicon nitride layer is patterned and removed so that a portion of the polysilicon layer is exposed. A silicon dioxide layer is then deposited over the silicon nitride layer. Next, the silicon dioxide layer is etched so that a dioxide spacer is formed on the sidewall of the silicon nitride layer. The silicon nitride layer is removed. A silicon nitride layer is deposited over the polysilicon layer and the dioxide spacer. The silicon nitride layer is etched so that nitride spacers are formed on the sidewalls of the dioxide spacer. Next, a photoresist layer is deposited over the exposed regions of the polysilicon layer, the dioxide spacer, and nitride spacers. The photoresist layer is then planarized. The nitride spacers are removed. The exposed portion of the polysilicon layer is removed. The exposed portion of the polysilicon layer is the portion previously covered by the nitride spacers. Next, halo structures are implanted into the exposed sections of the silicon layer. The photoresist layer is removed so that the polysilicon layer is exposed. The exposed portion of the polysilicon layer is then removed. The exposed portion of the polysilicon layer is the portion not covered by the dioxide spacer. The exposed portion of the gate dielectric is removed. The exposed portion of the gate dielectric layer is the portion not covered by the dioxide spacer. Finally, the dioxide spacer is removed.
REFERENCES:
patent: 5166087 (1992-11-01), Kakimoto et al.
patent: 5364807 (1994-11-01), Hwang
patent: 5422506 (1995-06-01), Zamapian
patent: 5427964 (1995-06-01), Kaneshiro et al.
patent: 5580804 (1996-12-01), Joh
patent: 5595919 (1997-01-01), Pan
patent: 5659504 (1997-08-01), Bude et al.
patent: 5675166 (1997-10-01), Ilderem et al.
patent: 5736446 (1998-04-01), Wu
Graybill David
Intel Corporation
Lebentritt Michael S.
LandOfFree
Method for implanting halo structures using removable spacer does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for implanting halo structures using removable spacer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for implanting halo structures using removable spacer will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1516219