Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-02
2008-07-15
Nguyen, Thanh (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S381000, C438S622000, C438S631000, C257SE21022
Reexamination Certificate
active
07399696
ABSTRACT:
A method of forming a high performance inductor comprises providing a substrate; forming a plurality of wiring levels over the substrate, wherein each of the wiring levels comprise a dielectric layer; forming a first trench having a first depth in a first dielectric layer on a first wiring level; forming a second trench in the first dielectric layer having a second depth extending at least into a second wiring level; forming a conductor layer substantially simultaneously in the first and second trenches; and removing portions of the conductor layer overfilling the first and second trenches to form a spiral-shaped inductor in the second trench. The method may further comprise forming an interconnect structure in the first trench.
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Coolbaugh Douglas D.
Erturk Mete
He Zhong-Xiang
Stamper Anthony K.
Canale Anthony
Gibb & Rahman, LLC
International Business Machines - Corporation
Nguyen Thanh
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