Method for high kinetic energy plasma barrier deposition

Details Method for high kinetic energy plasma barrier deposition Method for high kinetic energy plasma barrier deposition

2005-09-27

2005-09-27

Coleman, W. David (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

C438S694000, C438S689000, C438S643000, C438S627000, C438S653000, C438S618000

Reexamination Certificate

active

06949472

ABSTRACT:
A novel method for depositing a barrier layer on a single damascene, dual damascene or other contact opening structure. The method eliminates the need for pre-cleaning argon ion bombardment of the structure, thereby reducing or eliminating damage to the surface of the underlying conductive layer and sputtering of copper particles to the via or other contact opening sidewall. The process includes fabrication of a single damascene, dual damascene or other contact opening structure on a substrate; optionally pre-cleaning the structure typically using nitrogen or hydrogen plasma; depositing a thin metal barrier layer on the sidewalls and bottom of the structure; and redistributing or re-sputtering the barrier layer on the bottom and sidewalls of the structure.

REFERENCES:
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6797642 (2004-09-01), Chu et al.
patent: 2002/0090822 (2002-07-01), Jiang et al.
patent: 2003/0129827 (2003-07-01), Lee et al.
patent: 2004/0067308 (2004-04-01), Zheng et al.

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