Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Patent
1997-08-13
2000-09-19
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
438778, H01L 2131
Patent
active
061211583
ABSTRACT:
A method for hardening a photoresist material formed on a semiconductor substrate comprising the steps of coating a surface of a substrate of a wafer with a layer of photoresist material. Next, the layer of photoresist material disposed on the surface of the substrate of the wafer is masked, exposed, and developed to provide a patterned photoresist material. The patterned developed photoresist material layer is then inspected for critical dimensions, linewidths, and other dimensional characteristics. After the inspection, UV radiation is used to cure the patterned developed photoresist material layer to provide a hardened patterned developed photoresist material layer which is disposed on the surface of the substrate of the wafer. Next, the hardened patterned developed photoresist material layer is implanted from a first implant direction with an inert species material such as argon. Following the implantation step, the first implant direction is incremented 90 degrees to a second implant direction. The hardened patterned developed photoresist material layer is then implanted from the second implant direction with an identical dose of argon. Then, the second implant direction is incremented by another 90 degrees. Two addition implants are performed each from a different implant direction such that the hardened patterned developed photoresist material layer is implanted with equivalent doses of argon from four implant directions each angularly spaced apart by 90 degrees. After implantation, unmasked portions of the substrate of the wafer are etched. Next, the hardened patterned developed photoresist material layer is stripped from the surface of the substrate.
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Benchikha Hacene
Rivard John
Takagi Koji
Berry Renee R.
Bowers Charles
Sony Corporation
Sony Electronics Inc.
Tobin Christopher M.
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