Etching a substrate: processes – Masking of a substrate using material resistant to an etchant
Reexamination Certificate
2008-09-16
2008-09-16
Alanko, Anita (Department: 1765)
Etching a substrate: processes
Masking of a substrate using material resistant to an etchant
C216S046000, C216S051000, C216S067000, C216S068000, C216S072000, C216S079000, C216S080000, C438S696000, C438S714000, C438S723000, C438S724000, C438S738000, C438S743000, C438S744000
Reexamination Certificate
active
10641388
ABSTRACT:
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.
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Gangadharan Shibu
Koemtzopoulos C. Robert
Lee Chris G. N.
Miller Alan
Alanko Anita
Lam Research Corporation
Martine & Penilla & Gencarella LLP
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