Method for hard mask CD trim

Etching a substrate: processes – Masking of a substrate using material resistant to an etchant

Reexamination Certificate

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C216S046000, C216S051000, C216S067000, C216S068000, C216S072000, C216S079000, C216S080000, C438S696000, C438S714000, C438S723000, C438S724000, C438S738000, C438S743000, C438S744000

Reexamination Certificate

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10641388

ABSTRACT:
Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.

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