Method for hafnium nitride deposition

Details Method for hafnium nitride deposition Method for hafnium nitride deposition

2006-05-30

2009-06-16

Group, Karl E (Department: 1793)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S410000, C438S590000, C438S763000, C438S785000, C438S786000, C438S493000

Reexamination Certificate

active

07547952

ABSTRACT:
The present invention generally is a method for forming a high-k dielectric layer, comprising depositing a hafnium compound by atomic layer deposition to a substrate, comprising, delivering a hafnium precursor to a surface of the substrate, reacting the hafnium precursor and forming a hafnium containing layer to the surface, delivering a nitrogen precursor to the hafnium containing layer, forming at least one hafnium nitrogen bond and depositing the hafnium compound to the surface.

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