Method for growing Ge expitaxial layer on patterned...

Details Method for growing Ge expitaxial layer on patterned... Method for growing Ge expitaxial layer on patterned...

2007-09-11

2010-12-14

Smith, Matthew S (Department: 2823)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S795000, C257SE21002

Reexamination Certificate

active

07851378

ABSTRACT:
A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.

REFERENCES:
patent: 6537370 (2003-03-01), Hernandez et al.
patent: 6635110 (2003-10-01), Luan et al.
patent: 7037856 (2006-05-01), Maa et al.
patent: 2003/0127646 (2003-07-01), Christiansen et al.
patent: 2004/0235274 (2004-11-01), Kurita et al.
patent: 2005/0070115 (2005-03-01), Maa et al.
patent: 2006/0063358 (2006-03-01), Bedell et al.

Affiliated with

Also associated with

Rating

Method for growing Ge expitaxial layer on patterned... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for growing Ge expitaxial layer on patterned..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for growing Ge expitaxial layer on patterned... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4152914