Method for growing diamond crystals

Details Method for growing diamond crystals Method for growing diamond crystals

1984-09-25

1985-10-15

Smith, William P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156DIG68, 156DIG98, 423446, C30B 2904

Patent

active

045472572

ABSTRACT:
Diamond crystals are grown by subjecting reaction materials of nondiamond carbon, a solvent metal, and diamond seeds to pressure and temperature conditions in the diamond-stable region. The reaction materials are in the form of a pair of a superimposed solvent metal plate and a nondiamond carbon plate or a pile made of a plurality of the pairs of the superimposed solvent metal plate and nondiamond carbon plate, and a plurality of the seeds are disposed on either one or each of the confronting surfaces of the pair of the superimposed solvent metal plate and nondiamond carbon plate. Alternatively, the reaction materials are in the form of a plate made of a mixture of the solvent metal and the nondiamond carbon or a pile made of a plurality of the mixture plates, and a plurality of the seeds are disposed on a surface of each plate. The seeds have a particle size of not larger than 50 .mu.m and are regularly disposed in such a manner that the seeds are located at a substantially equal distance and the distance between the peripheries of every two adjacent growth diamond crystal particles is from 50 to 300 .mu.m. The diamond crystals are allowed to grow until their sizes reach at least five times the size of the seeds.

REFERENCES:
patent: 2992900 (1961-07-01), Bovenkerk
patent: 3423177 (1969-01-01), Bovenkerk
patent: 4034066 (1977-07-01), Strong et al.
patent: 4147255 (1979-04-01), Ishizuka

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