Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1990-08-31
1993-01-19
Beck, Shrive
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
427 38, 4272551, 4272552, C23C 1400, C23C 1600
Patent
active
051804689
ABSTRACT:
There is disclosed a process for growing a high-melting-point metal film comprising the steps of forming a first ion-implanted layer in a given region of a silicon substrate, in which region a second ion-implanted layer is formed; contacting a high-melting-point metal fluoride gas with the surface of the second ion-implanted layer to adhere the high-melting-point metal thereto; growing the high-melting-point metal film of a given thickness by reacting the mixture of the high-melting-point metal fluoride and silane gas; and subjecting the silicon substrate to a heat treatment, characterized in that the above third and fourth steps are alternatively repeated.
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Ko Kwang-Ok
Park Jong-Ho
Beck Shrive
Bushnell Robert E.
Dang V. Duong
Samsung Electronics Co,. Ltd.
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