Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Patent
1998-10-29
2000-12-19
Niebling, John F.
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
438942, 438945, 257506, H01L 2176
Patent
active
061626996
ABSTRACT:
A method for effectively generating limited trench width isolation structures without incurring the susceptibility to dishing problems to produce high quality ICs employs a computer to generate data representing a trench isolation mask capable of being used to etch a limited trench width isolation structure about the perimeter of active region layers, polygate layers, and Local Interconnect (LI) layers. Once the various layers are defined using data on the computer and configured such that chip real estate is maximized, then the boundaries are combined using, for example, logical OR operators to produce data representing an overall composite layer. Once the data representing the composite layer is determined, the data is expanded evenly outward in all horizontal directions by a predetermined amount, .lambda., to produce data representing a preliminary expanded region. Any narrow regions are then merged together with the preliminary expanded region to produce data representing a final expanded region, which is used to produce a mask employed to produce an even width trench about the perimeter of the composite layer. The computer then generates the mask according to the results achieved and the isolation trenches are etched. The resulting isolation trenches prevent short-circuits from occurring between the various electrical devices on the semiconductor device.
REFERENCES:
patent: 4753901 (1988-06-01), Ellsworth et al.
patent: 5734192 (1998-03-01), Sengle et al.
patent: 5742090 (1998-04-01), Stolmeijer et al.
patent: 5877066 (1999-03-01), Stolmeijer et al.
patent: 5888894 (1999-03-01), Kong et al.
patent: 5948573 (1999-09-01), Takahashi
patent: 5958795 (1999-09-01), Chen et al.
Bandyopadhyay Basab
Ibok Effiong
Karlsson Olov
Kepler Nick
Lyons Christopher F.
Advanced Micro Devices , Inc.
Niebling John F.
Simkovic Viktor
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