Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-10-17
2006-10-17
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S278000
Reexamination Certificate
active
07122434
ABSTRACT:
A semiconductor structure300comprises a plurality of first track conductors303, a plurality of second track conductors304, which are insulated with respect to the first track conductors303and form a grid together with these first track conductors303, and a plurality of third track conductors307parallel above the first track conductors303, which third track conductors307partly cover the second track conductors304and are insulated with respect thereto, in which semiconductor structure300, between in each case two adjacent second track conductors304, there is located an electrical contact305between each first track conductor303and the corresponding third track conductor307which lies above it.
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Kutter Christoph
Ludwig Christoph
Morhard Klaus-Dieter
Altera Law Group LLC
Cao Phat X.
Infineon - Technologies AG
Stone Jeffrey R.
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