Method for galvanic forming of bonding pads

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438678, 438615, 438653, 438654, 438686, 438687, 438688, H01L 21288, H01L 2160

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active

059899930

ABSTRACT:
Method for the preparation of electrodeposited or galvanically deposited bumps for the bonding of integrated circuits, characterized by two subsequent metal depositions, deposited without an external current source (chemical metal deposition) on a metallization 1, the first deposition being thicker than the second and the second deposition being more even or more regular throughout a large area than the first one.

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