Method for forming ZnO film, method for forming ZnO...

Details Method for forming ZnO film, method for forming ZnO... Method for forming ZnO film, method for forming ZnO...

2006-05-23

2006-05-23

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S261000, C438S591000

Reexamination Certificate

active

07049190

ABSTRACT:
A ZnO buffer layer having an electric conductivity of 1×10−9S/cm or lower or alternatively a ZnO buffer layer having a diffraction peak of a crystal face other than (002) and (004) in X-ray diffraction is formed on a substrate by sputtering. A ZnO semiconductor layer is formed on the ZnO buffer layer. The ZnO semiconductor layer is formed under the condition that the flow rate ratio of an oxygen gas in a sputtering gas is lower than that in the formation of the ZnO buffer layer.

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patent: 6448585 (2002-09-01), Kadota
patent: 6617183 (2003-09-01), Kadota et al.
patent: 2002/0025594 (2002-02-01), Iwata et al.
patent: 63-290256 (1988-11-01), None
patent: 8-325711 (1996-12-01), None
patent: 2000-244014 (2000-09-01), None
patent: 2001-287998 (2001-10-01), None

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