Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-08-22
2006-08-22
Luu, Chuong Anh (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S707000, C438S057000, C438S776000
Reexamination Certificate
active
07094641
ABSTRACT:
A method is provided that is capable of forming a wiring pattern having an extremely flat surface and few convexo-concave shapes on a substrate on which the wiring pattern is formed. The method to form a wiring pattern includes a bank forming process, a conductive layer forming process and a transferring process. Here, a photothermal converting layer including a photothermal converting material that converts light energy to thermal energy and a sublimation layer including a sublimable material are stacked on a first substrate in this order. In the bank forming process, a first light irradiation is performed to a fixed region on a surface of the first substrate from the sublimation layer side so as to sublimate a part of the sublimation layer, thereby forming banks made of the sublimation layer to a region excluding the region for light irradiation. In the conductive layer forming process, a conductive layer is provided between the banks. In the transferring process, a conductive pattern layer including the conductive layer and the banks, and a substrate to be treated are faced. Then, a second light irradiation is performed to the faced substrates so as to transfer the conductive pattern layer to the substrate to be treated.
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Luu Chuong Anh
Oliff & Berridg,e PLC
Seiko Epson Corporation
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