Method for forming well of semiconductor device

Details Method for forming well of semiconductor device Method for forming well of semiconductor device

1997-04-02

1998-06-02

Dang, Trung

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438225, 438227, 438527, 438950, H01L 218238

Patent

active

057598843

ABSTRACT:
A method of forming first and second conductivity type wells in a semiconductor device includes the steps of forming an isolation layer on a semiconductor substrate, forming a multi-layer mask over a portion of the substrate to define the first and second conductivity type wells, implanting a first conductivity type impurity to form the first conductivity type well, removing a partial layer from the multi-layer mask, and implanting a second conductivity type impurity to form the second conductivity type well.

REFERENCES:
patent: 4516316 (1985-05-01), Haskell
patent: 5292671 (1994-03-01), Odanaka
patent: 5362670 (1994-11-01), Iguchi et al.
patent: 5501993 (1996-03-01), Borland
patent: 5573963 (1996-11-01), Sung
patent: 5637524 (1997-06-01), Lee et al.

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