Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2009-01-16
2011-12-06
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S139000, C438S140000
Reexamination Certificate
active
08071450
ABSTRACT:
A method of manufacturing a semiconductor device includes preparing a semiconductor wafer with a substrate of a first conductivity type and forming a first epitaxial layer of the first conductivity type on the substrate. The first epitaxial layer has a first thickness. The method further includes growing a first oxide layer on the first epitaxial layer, masking the first oxide layer, ion implanting to create at least one embedded region of a second conductivity type in the first epitaxial layer, removing the first oxide layer, and forming a second epitaxial layer of the first conductivity type on the first epitaxial layer. The second epitaxial layer has the first thickness minus a thickness equal to a thickness of the at least one embedded region of the second conductivity type.
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Nadav Ori
Panitch Schwarze Belisario & Nadel LLP
Third Dimension (3D) Semiconductor, Inc.
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