Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-07-03
2007-07-03
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C438S481000, C438S508000
Reexamination Certificate
active
11195510
ABSTRACT:
A method for making a semiconductor device is provided herein. In accordance with the method, a semiconductor structure is provided which comprises a substrate (201) with a gate structure (209) disposed thereon, wherein the gate structure comprises a gate electrode (227) and at least one spacer structure (215, 217), and wherein the substrate comprises a first semiconductor material. A first trench (231) is created in the substrate adjacent to the gate structure through the use of a first etch. The gate electrode is then etched with a second etch. Preferably, the minimum cumulative reduction in thickness of the gate electrode from the first and second etches is dg, the maximum depth of the first and second trenches after the first and second etches is dt, and dg≧dt.
REFERENCES:
patent: 6621131 (2003-09-01), Murthy
patent: 2005/0093084 (2005-05-01), Wang et al.
Dhandapani Veer
Goolsby Brian
Nguyen Bich-Yen
Zhang Da
Fortkort John A.
Fortkort & Houston P.C.
Freescale Semiconductor Inc.
Le Dung A.
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