Method for forming underlying insulation film

Details Method for forming underlying insulation film Method for forming underlying insulation film

2003-03-31

2009-11-24

Mulpuri, Savitri (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S761000, C438S770000, C438S775000, C257SE21082, C257SE21284, C257SE21302

Reexamination Certificate

active

07622402

ABSTRACT:
The surface of an insulating film disposed on an electronic device substrate is irradiated with plasma based on a process gas comprising at least an oxygen atom-containing gas, to thereby form an underlying film at the interface between the insulating film and the electronic device substrate. A good underlying film is provided at the interface between the insulating film and the electronic device substrate, so that the thus formed underlying film can improve the property of the insulating film.

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