Method for forming trench capacitor

Details Method for forming trench capacitor Method for forming trench capacitor

2005-09-20

2005-09-20

Nguyen, Ha Tran (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S248000, C438S247000, C438S246000, C438S244000, C438S387000, C438S392000, C438S391000, C438S390000

Reexamination Certificate

active

06946344

ABSTRACT:
A method for forming a trench capacitor. A semiconductor substrate with a trench is provided, and a trench capacitor is formed in the trench with a storage node and a node dielectric layer. The top portion of the trench is ion implanted to a predetermined angle to form an ion doped area on a sidewall of the top portion of the trench and a top surface of the trench capacitor. The ion doped area is oxidized to form an oxide layer. A sidewall semiconductor layer is formed on another sidewall using the oxide layer as a mask, and then the oxide layer is removed. A barrier layer is conformally formed on the surface of the trench, and the trench is filled with a conducting layer.

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