Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-07-03
2011-12-13
Richards, N Drew (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S294000, C438S353000, C438S359000, C438S702000, C257S506000, C430S005000
Reexamination Certificate
active
08076208
ABSTRACT:
Transistors are formed using pitch multiplication. Each transistor includes a source region and a drain region connected by strips of active area material separated by shallow trench isolaton structures. The shallow trench isolaton structures are formed by dielectric material filling trenches that are formed by pitch multiplication. During pitch multiplication, rows of spaced-apart mandrels are formed and spacer material is blanket deposited over the mandrels. The spacer material is etched to define spacers on sidewalls of the mandrels and the mandrels are subsequently removed, thereby leaving free-standing spacers. The spacers constitute a mask, through which an underlying substrate is etched to form the trenches and strips of active area material. The trenches are filled to form the shallow trench isolaton structures. The substrate is doped to form source, drain and channel regions and a gate is formed over the channel region. In some embodiments, the shallow trench isolaton structures and the strips of material facilitate the formation of transistors having a high breakdown voltage.
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Jung Michael
Knobbe Martens Olson & Bear LLP
Micro)n Technology, Inc.
Richards N Drew
LandOfFree
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