Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-07-19
2005-07-19
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S682000, C438S656000, C438S655000, C438S253000, C438S250000, C438S393000, C438S396000
Reexamination Certificate
active
06919273
ABSTRACT:
A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4gas, a silicon hydride gas and NH3gas are used as source gases for forming the TiSiN film by the thermal CVD process. TiCl4gas, a silicon hydride gas, H2gas and N2gas are used as source gases for forming a TiSiN film by the plasma CVD process.
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Matsuse Kimihiro
Otsuki Hayashi
Tada Kunihiro
Kennedy Jennifer M.
Niebling John F.
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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