Method for forming thin film

Details Method for forming thin film Method for forming thin film

2006-09-12

2006-09-12

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S778000

Reexamination Certificate

active

07105459

ABSTRACT:
It is an object to provide, with a high productivity, a dielectric thin film having a high degree of pore and a very great mechanical strength, and there are included a surfactant film forming step of forming a film including a surfactant on a surface of a substrate on which a thin film is to be formed, a vapor deposition step of causing the substrate to come in contact with a gas phase containing a silica derivative to form a thin film including the silica derivative, and a step of calcining the substrate having the thin film formed thereon and decomposing and removing the surfactant, the thin film being thus formed.

REFERENCES:
patent: 6573131 (2003-06-01), Yan et al.
patent: 2005/0003678 (2005-01-01), Nishiyama et al.
patent: 1 094 506 (2001-04-01), None
patent: 2002-217190 (2002-08-01), None
patent: 2002-293529 (2002-10-01), None
patent: 01/75957 (2001-10-01), None
patent: 03/003440 (2003-01-01), None

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