Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-08
2011-03-08
Tran, Tan N (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S300000, C438S304000, C438S305000, C438S306000, C438S307000
Reexamination Certificate
active
07902032
ABSTRACT:
An integrated circuit (IC) includes a plurality of compressively strained PMOS transistors. The IC includes a substrate having a semiconductor surface. A gate stack is formed in or on the semiconductor surface and includes a gate electrode on a gate dielectric, wherein a channel region is located in the semiconductor surface below the gate dielectric. A source and a drain region is opposing sides of the gate stack. At least one compressive strain inducing region including at least one specie selected from Ge, Sn and Pb is located in at least a portion of the source and drain regions of the PMOS transistors, wherein the strain inducing region provides ≦1010dislocation lines/cm2and an active concentration of the compressive strain inducing specie that is above a solid solubility limit for the compressive strain inducing specie in the compressive strain inducing region. A method for forming compressively strained PMOS transistors includes implanting on at least opposing sides of the gate stack using at least one compressive strain inducing specie selected from Ge, Sn and Pb at a dose ≧1×1015cm−2, at an implantation temperature during implanting in a temperature range ≦273 K, wherein the implant conditions are sufficient to form an amorphous region. The wafer is annealed using annealing conditions including a peak anneal temperature of between 1050° C. and 1400° C. and an anneal time at the peak temperature of ≦10 seconds, wherein the amorphous region recrystallizes by solid phase epitaxy (SPE).
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Brady III Wade J.
Garner Jacqueline J.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
Tran Tan N
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