Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-03
2006-10-03
Whitehead, Jr., Carl W. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S637000, C257SE23151
Reexamination Certificate
active
07115497
ABSTRACT:
A method for forming a storage node contact plug of a dynamic random access memory includes forming insulating layers on an overall surface of a semiconductor substrate having a plurality of buried contact plugs, etching the insulating layers down to a top surface of the buried contact plugs to form first contact holes on the buried contact plugs, forming a photoresist pattern on the insulating layers and the first contact holes, etching the insulating layers to form second contact holes on the second insulating layer, and filling the first and second contact holes with conductive material.
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Dolan Jennifer
Lee & Morse P.C.
Samsung Electronics Co,. Ltd.
Whitehead Jr. Carl W.
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