Method for forming STI structures with controlled step height

Details Method for forming STI structures with controlled step height Method for forming STI structures with controlled step height

2006-08-22

2006-08-22

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S295000, C438S294000

Reexamination Certificate

active

07094653

ABSTRACT:
STI structures with step height control are produced using a relatively thin nitrogen-containing layer formed over a substrate. The nitrogen-containing layer may consist of SiN and SiON films with a combined thickness of 900 angstroms or less. Trench openings are formed to extend through the nitrogen-containing layer and into the substrate. Chemical vapor deposition is used to form a dielectric such as an oxide within the trench openings and over the top surface of the nitrogen-containing layer. A polishing operation is used to partially polish the CVD dielectric layer leaving a reduced thickness over the nitrogen-containing layer, and then a dry etch is used to remove the dielectric from over the nitrogen-containing layer and uniformly recede the top surface of the dielectric within the trench. Dishing effects are avoided. The nitrogen-containing layer is removed to produce STI structures with step heights of less than 500 angstroms.

REFERENCES:
patent: 6171180 (2001-01-01), Koutny et al.
patent: 6281082 (2001-08-01), Chen et al.
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6649489 (2003-11-01), Chang et al.
patent: 6682985 (2004-01-01), Yuzuriha et al.
patent: 6777336 (2004-08-01), Lin et al.
patent: 6787409 (2004-09-01), Ji et al.

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